Calculate the concentration of vacancies in silicon at the solid-liquid equilibrium temperature of 1683 K where single crystals of silicon are grown. The enthalpy of formation for vacancies in silicon is 2.3 eV/vacancy.
What will be an ideal response?
The vacancy concentration at 1683 K can be computed with the equation for the equilibrium number of vacancies as follows:
There is one vacancy for every 10 million atoms.
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