In a semiconductor doped with donor atoms, the conduction-band energy is 1.1 eV and the donor energy level is 1.0 eV. At a high temperature there are approximately as many electrons in the conduction band as there are holes in the valence band. For this semiconductor, the Fermi energy is approximately equal to:
(a) 1.1 eV
(b) 1.0 eV
(c) 1.05 eV
(d) 0.55 eV
(d) 0.55 eV
Physics & Space Science
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