To make an n-type semiconductor from silicon, one adds impurity atoms of
A. cobalt.
B. oxygen.
C. arsenic.
D. fluorine.
E. gallium.
Answer: C
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Indicate whether the statement is true or false
Two large parallel plates are separated by 1.0 mm of air. If the potential difference between them is 3.0 V, what is the magnitude of their surface charge densities? (?0 = 8.85 × 10-12 C2/N ? m2)
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a. 32 b. 32000 c. 30000 d. 300