It is desired to produce a p-type semiconductor out of Group IV silicon that will have an electrical conductivity of 100 (?·m)-1 at room temperature. Assume that the mobility of electrons in silicon is equal to 0.10 m2 /V·s, and the mobility of holes is equal to 0.03 m2 /V·s. You may assume that this semiconductor is in the extrinsic range of operation at this temperature.
(a) What is the required density of holes in the valence band?
(b) What concentration of substitutional acceptor atoms will produce the desired electrical conductivity, assuming that an element from Group III is substituted for the
silicon atoms?
You might also like to view...
If a galaxy is located at a distance of 18 Mpc and is found to have recessional velocity of 1170 km/s, what is Hubble's constant based only on this galaxy?
a. 65 km/s b. 75 km/s c. 55 km/s d. 85 km/s e. 95 km/s
Photon Momentum: What is the momentum of a photon of light that has a frequency of 2.8 × 1014 Hz? (c = 3.00 × 108 m/s, h = 6.626 × 10-34 J ? s)
A. 1.5 × 1028 kg?m/s B. 2.1 × 1028 kg?m/s C. 4.4 × 1028 kg?m/s D. 6.3 × 1028 kg?m/s E. 6.2 × 1028 kg?m/s
The speed of light in a certain material is measured to be 2.2 × 108 m/s. What is the index of refraction of this material? (c = 3.0 × 108 m/s)
A) 1.1 B) 1.2 C) 1.4 D) 1.6 E) 1.8
An object placed 19.0 cm from a concave mirror produces a real image 12.7 cm from the mirror. If the object is now moved to a new position 27.0 cm from the mirror, where is the new image located as measured from the mirror?
a. 7.61 cm b. 10.6 cm c. 5.94 cm d. 18.0 cm e. 20.7 cm