It is desired to produce a p-type semiconductor out of Group IV silicon that will have an electrical conductivity of 100 (?·m)-1 at room temperature. Assume that the mobility of electrons in silicon is equal to 0.10 m2 /V·s, and the mobility of holes is equal to 0.03 m2 /V·s. You may assume that this semiconductor is in the extrinsic range of operation at this temperature.
(a) What is the required density of holes in the valence band?
(b) What concentration of substitutional acceptor atoms will produce the desired electrical conductivity, assuming that an element from Group III is substituted for the
silicon atoms?
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