A pn-junction is produced by doping silicon that has an energy gap of 1.11 eV with arsenic (Group V) to produce the n-type material, and with boron (Group III) to produce the p-type material.
(a) At temperatures approaching absolute zero, what is the value of the Fermi energy in the n-type and p-type material?
(b) At temperatures approaching absolute zero, what would be the value of the contact potential at a pn-junction of these two materials?
(c) At temperatures in the intrinsic range of operation for both of these materials, what is the value of the contact potential?
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